当前位置:首 页 > 师资队伍 > 黄浦

黄浦

    黄浦  办公室:917      办公室电话:26651310     

    深圳大学助理教授,北京大学物理学院人工微结构和介观物理实验室博士,主要从事低维纳米材料的理论计算,在ACS Nano, J. Phys. Chem. Lett., J. Mater. Chem. A, Chem. Mater.等国际期刊发表SCI论文17篇,一作5篇,J. Mater. Chem. A文章被评为2016年度热点论文。2015至2016连续两年荣获北京大学年度创新奖。自主搭建材料计算平台一套,包括VASP, ABINIT, Material Studio, SIESTA, Quantum Espresso, Atomistix ToolKit+BerkeleyGW/Yambo,涵盖了材料的电子结构调控及性质预测、激子效应分析,缺陷性质研究,过渡态NEB计算以及器件性质模拟等一系列功能。

一、主要研究方向

1.纳米光电材料的电子结构调控及性质预测;
2.缺陷对材料性质的影响;
3.低维半导体材料的激子效应;
4.新材料的理论设计与高通量搜索。

二、代表性论文
1.P. Huang, H. Zong, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, Y. Ding, Y. He, J. Lu and X. Hu, “Origin of 3.45 ev emission line and yellow luminescence band in GaN nanowires: surface microwire and defect”, ACS Nano 9(9), 9276-9283 (2015).
2.P. Huang, J.- J. Shi, P. Wang, M. Zhang, Y. Ding, M. Wu, J. Lu and X. Wang, “Origin of the wide band gap from 0.6 to 2.3 ev in InN photovoltaic material: quantum confinement from surface nanostructure”, J. Mater. Chem. A 4(44), 17412-17418 (2016). (Hot Article for 2016).
3.P. Huang, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, Y. Ding, X. Cao, M. Wu and J. Lu, “Anomalous light emission and wide photoluminescence spectra in graphene quantum dot: quantum confinement from edge microstructure”, J. Phys. Chem. Lett. 7(15), 2888-2892 (2016). 
4.Y. Wang, P. Huang, M. Ye, R. Quhe, Y. Pan, H. Zhang, H. Zhong, J. Shi, and J. Lu, “Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene”, Chem. Mater. 29(5), 2191-2201 (2017). (co-first author)
5.P. Huang, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, Y. Ding, J. Lu and X. Wang, “Band edge modulation and interband optical transition in AlN:MgAl-ON nanotubes”, Mater. Res. Express 1(2), 025030 (2014). 
6.H. Zhong, J.- J. Shi, M. Zhang, X. Jiang, P. Huang and Y. Ding, “Reducing Mg acceptor activation-energy in Al0.83Ga0.17N disorder alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice using MgGa δ-doping: mg local-structure effect”, Sci. Rep. 4, 6710 (2014). 
7.H. Zhong, J.- J. Shi, M. Zhang, X. Jiang, P. Huang and Y. Ding, “Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: role of O-atom in GaN monolayer”, AIP Adv. 5(1), 017114 (2015). 
8.X. Jiang, J.- J. Shi, M. Zhang, H. Zhong, P. Huang, Y. Ding, M. Wu, X. Cao, X. Rong, and X. Wang, “Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGa δ-doping (AlN)m/(GaN)n (m≥n) superlattice”, J. Alloy Compd. 686, 484-488 (2016). 
9.X. Jiang, J.- J. Shi, M. Zhang, H. Zhong, P. Huang, Y. Ding, X. Cao, M. Wu and Z. Liao, “Breakthrough of the p-type doping bottleneck in ZnO by Inserting an ultrathin ZnX (X=S, Se and Te) layer doped with NX or AgZn”, J. Phys. D: Appl. Phys. 49(9), 095104 (2016). 
10.X. Jiang, J.- J. Shi, M. Zhang, H. Zhong, P. Huang, Y. Ding, X. Cao and M. Wu, “Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX(X = S, Se and Te) layer to form short-period (ZnO)5/(ZnX)1 superlattice”, J. Alloy Compd. 711, 581-591 (2017).
11.X. Jiang, J.- J. Shi, M. Zhang, H. Zhong, P. Huang, Y. Ding, T. Yu, B. Shen, J. Lu and X. Wang, “Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n(m>n) superlattice substitution for Al-Rich AlGaN disorder alloy: ultra-thin GaN layer modulation”, New J. Phys. 16(11), 113065-113087 (2014). 
12.X. Jiang, J.- J. Shi, M. Zhang, H. Zhong, P. Huang, Y. Ding, Y. He and X. Cao, “Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-Doping (AlN)5(GaN)1: the strain Effect”, J. Phys. D: Appl. Phys. 48(47), 475104 (2015).
13.Y. Ding, J.- J. Shi, C. Xia, M. Zhang, J. Du, P. Huang, M. Wu, H. Wang, Y. Cen and S. Pan, “Enhancement of hole mobility in InSe monolayer via an InSe and Black phosphorus heterostructure”, Nanoscale 9, 14682-14689 (2017).
14.Y. Ding, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, P. Huang, Y. He and X. Cao, “Origin of a wide and asymmetric blue luminescence band in AlN nanowires: VN, VAl, ON and 3ON-VAl surface defects”, J. Phys. Chem. C. 119(37), 21688-21693 (2015). 
15.Y. Ding, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, P. Huang, M. Wu and X. Cao, “Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption”, RSC Adv. 6(35), 29190-29196 (2016). 
16.X. Cao, J.- J. Shi, M. Zhang, X. Jiang, H. Zhong, P. Huang, Y. Ding and M. Wu, “Band gap opening of graphene by forming heterojunctions with the 2D carbonitrides nitrogenated holey graphene, g‑C3N4, and g‑CN: electric field effect”, J. Phys. Chem. C 120(20), 11299-11305 (2015). 
17.T. Zhou, J.- J. Shi, M. Zhang, M. Yang, H. Zhong, X. Jiang and P. Huang, “Band edge modulation and light emission in InGaN nanowires due to the surface state and microscopic indium distribution”, J. Phys. Chem. C 117(31), 16231-16237 (2013).

返回
顶部